PLASMA ETCHING SYSTEM
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PLASMA ETCHING SYSTEM  
Function & Features
 

- Plasma를 이용한 반도체 불량 분석 장비
- ICP(Inductively Coupled Plasma) type, CCP(Capacitively
  Coupled Plasma) type으로 나눔
- Wafer(Silicon) 에칭, 반도체 MCP(Multi chip package)의 실리콘
  다이(상층)을 에칭하여 정밀분석이 가능
- 실리콘 Layer, WBL, 다프(DAF) 에칭 가능
- 분석용도에 가장 적합한 공정조건 제공
- 다량의 시료를 동시에 작업 진행할 수 있는 챔버 시스템
- Technology
  > Ion density uniformity is below 2% on 6 inch substrate
  > Active substrate temperature control(He backside
     cooling)
  > Very high etch rate
  > Recipe storage and data logging
  > Z-axis motion control
  > Higher Uniformity by Planar ICP antenna design
  > Exactly same gas conductance by unique gas
     diffusion gun design
 
 
 
 
Specification(ICP type)
   
 
Item Description
Chamber 1 process chamber, 1 load lock chamber with standard wafer
magazines, Compact & Automatic load/lock system
Arm transfer Robot arm transfer module
Process module Planar type high density plasma source, Electrostatic wafer clamping
with He backside cooling
RF System Source 13.56MHz / 2.0 kW
Bias 13.56MHz / 600 W, Auto matching network
Vacuum control Auto pressure control with throttle valve
Gas channel Max. 6ch Gas delivery module with mass flow controller
Operation PC base control including Windows user interface for fully automatic
process control
Dimension 1,550(W) x 1,255(D) x 2,090(H) mm
Weight Approx. 120 kg (8 inch type)
   
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